BFY181 Просмотр технического описания (PDF) - Siemens AG

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производитель

BFY181

HiRel NPN Silicon RF Transistor

Siemens AG 

BFY 181

Table 3

AC Characteristics at TA = 25 °C unless otherwise specified

Parameter

Symbol

Limit Values

min. typ. max.

Transition frequency

fT

IC = 10 mA, VCE = 5 V, f = 500 MHz

IC = 10 mA, VCE = 8 V, f = 500 MHz

Collector-base capacitance

CCB

VCB = 10 V, VBE = vbe = 0, f = 1 MHz

Collector-emitter capacitance

CCE

VCE = 10 V, VBE = vbe = 0, f = 1 MHz

Emitter-base capacitance

CEB

VEB = 0.5 V, VCB = vcb = 0, f = 1 MHz

Noise figure

IC = 4 mA, VCE = 5 V, f = 2 GHz,

ZS = ZSopt

Power gain

IC = 10 mA, VCE = 5 V, f = 2 GHz,

ZS = ZSopt, ZL = ZLopt

F

Gma 4)

Transducer gain

IC = 10 mA, VCE = 5 V, f = 2 GHz,

ZS = ZL = 50 W

½S21e½2

6.5

-

-

-

-

-

13.5

10

7.5

8

0.21

0.34

0.45

2.2

14.5

11

-

-

0.29

-

0.6

2.9

-

-

4) Gma = SS-----21---12-- (k Ð k2 Ð 1), Gms = SS-----21---12--

Unit

GHz

pF

pF

pF

dB

dB

dB

Semiconductor Group

3

Draft A04 1998-04-01

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