BFY193 Просмотр технического описания (PDF) - Infineon Technologies

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BFY193

HiRel NPN Silicon RF Transistor

Infineon Technologies 

BFY193

Electrical Characteristics (continued)

Parameter

Symbol

DC Characteristics

Base-Emitter forward voltage

VFBE

IE = 30 mA, IC = 0

DC current gain

hFE

IC = 30 mA, VCE = 8 V

AC Characteristics

Transition frequency

fT

IC = 40mA, VCE = 5 V, f = 500 MHz

IC = 50 mA, VCE = 8 V, f = 500 MHz

Collector-base capacitance

CCB

VCB = 10 V, VBE = vbe = 0, f = 1 MHz

Collector-emitter capacitance

CCE

VCE = 10 V, VBE = vbe = 0, f = 1 MHz

Emitter-base capacitance

CEB

VEB = 0.5V, VCB = vcb = 0, f = 1 MHz

Noise Figure

F

IC = 15 mA, VCE = 5 V, f = 2 GHz,

ZS = ZSopt

Power gain

Gma 1.)

IC = 40 mA, VCE = 5V, f = 2 GHz

ZS = ZSopt , ZL= ZLopt

Transducer gain

IC = 40 mA, VCE = 5 V, f = 2 GHz

ZS = ZL = 50 Ω

Output Power

IC = 50 mA, VCE = 5 V, f = 2GHz,

PIN=10dBm, ZS = ZL = 50 Ω

|S21e|2

POUT

Notes.:

1.)

Gma

=

S 21

S12

(k

−

k 2 − 1) ,

Gms

=

S 21

S12

min.

-

50

6,5

-

-

-

-

-

12.5

8

16.5

Values

Unit

typ. max.

-

1

V

100 175 -

GHz

7.5

-

8

-

0.56 0.75 pF

0.34 -

pF

1.9

2.4 pF

2.3

2.9 dB

13.5 -

dB

9

-

dB

17.5 -

dBm

Semiconductor Group

3 of 5

Draft B, September 99

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