BLW85 Просмотр технического описания (PDF) - Philips Electronics

Номер в каталоге

Компоненты Описание

производитель

BLW85

HF/VHF power transistor

Philips Electronics 

Philips Semiconductors

HF/VHF power transistor

DESCRIPTION

N-P-N silicon planar epitaxial

transistor intended for use in class-A,

B and C operated mobile h.f. and

v.h.f. transmitters with a nominal

supply voltage of 12,5 V. The

transistor is resistance stabilized and

is guaranteed to withstand severe

load mismatch conditions with a

supply over-voltage to 16,5 V.

Matched hFE groups are available on

request.

It has a 3/8" flange envelope with a

ceramic cap. All leads are isolated

from the flange.

Product specification

BLW85

QUICK REFERENCE DATA

R.F. performance up to Th = 25 °C

MODE OF OPERATION VCE

V

f

MHz

c.w. (class-B)

s.s.b. (class-AB)

12,5 175

12,5 1,6−28

PL

W

45

3−30 (P.E.P.)

Gp

dB

> 4,5

typ. 19,5

η

%

> 75

typ. 35

zi

Ω

1,4 + j1,5

−

ZL

d3

Ω

dB

2,7−j1,3 −

− typ. −33

PIN CONFIGURATION

halfpage

1

2

4

handbook, halfpage

c

b

MBB012

e

3

MSB057

Fig.1 Simplified outline and symbol.

PINNING - SOT123

PIN

DESCRIPTION

1 collector

2 emitter

3 base

4 emitter

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely

safe provided that the BeO disc is not damaged.

March 1993

2

Share Link: