BSP62T3 Просмотр технического описания (PDF) - Motorola => Freescale

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BSP62T3

MEDIUM POWER PNP SILICON DARLINGTON TRANSISTOR SURFACE MOUNT

Motorola => Freescale 

BSP62T1

ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)

Characteristics

Symbol

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

(IC = 100 µAdc, IE = 0)

V(BR)CBO

Emitter-Base Breakdown Voltage

(IE = 10 µAdc, IC = 0)

V(BR)EBO

Collector-Emitter Cutoff Current

(VCE = 80 Vdc, VBE = 0)

ICBO

Emitter-Base Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

IEBO

ON CHARACTERISTICS (2)

DC Current Gain

hFE

(IC = 150 mAdc, VCE = 10 Vdc)

(IC = 500 mAdc, VCE = 10 Vdc)

Collector-Emitter Saturation Voltage

(IC = 500 mAdc, IB = 0.5 mAdc)

VCE(sat)

Base-Emitter On Voltage

(IC = 500 mAdc, IB = 0.5 mAdc)

VBE(on)

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Min

90

5.0

—

—

1000

2000

—

—

Max

Unit

Vdc

—

Vdc

—

µAdc

10

µAdc

10

—

—

—

Vdc

1.3

Vdc

1.9

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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