BSP613PH6327 Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

BSP613PH6327

SIPMOS Small-Signal-Transistor

Infineon Technologies 

BSP613P

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min. typ. max.

Dynamic Characteristics

Transconductance

g fs

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

|VDS|≥2*|ID|*RDS(on)max , 2.7

ID=2.9A

VGS=0, VDS=-25V,

-

f=1MHz

-

-

VDD=-30V, VGS=-10V,

-

ID=2.9A, RG=2.7Ω

-

-

-

5.4

-S

715 875 pF

230 295

90 120

6.7 17 ns

9

18

26 52

7

19

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Qgs

VDD=-48V, ID=2.9A

Qgd

Qg

VDD=-48V, ID=2.9A,

VGS=0 to -10V

V(plateau) VDD=-48V, ID=2.9A

Reverse Diode

Inverse diode continuous

IS

TA=25°C

forward current

Inv. diode direct current, pulsed ISM

Inverse diode forward voltage VSD

Reverse recovery time

trr

Reverse recovery charge

Qrr

VGS=0V, |IF| = |IS|

VR=-30V, |IF| = |IS|,

di F/dt=100A/µs

-

2.5 3.8 nC

-

8.9 14.3

-

22 33

-

-3.9

-V

-

- -2.9 A

-

- -11.6

-

-0.8 -1.1 V

- 37.2 79 ns

- 59.8 112 nC

Rev.2.8

Page 3

2016-05-30

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