BUK1M200-50SGTD Просмотр технического описания (PDF) - Philips Electronics
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BUK1M200-50SGTD Datasheet PDF : 15 Pages
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Philips Semiconductors
BUK1M200-50SGTD
Quad channel logic level TOPFET
9
ID(th)(trip)
(A)
6
03pb 02
9
ID(th)(trip)
(A)
6
03pb 01
3
3
0
-50
0
50
100 Tj (°C) 150
Tj = 25 °C; tp = 300 µs
Fig 10. Drain current trip threshold as a function of
junction temperature; typical values.
0
0
2
4 VIS (V) 6
Tj = 25 °C; VDS = 10 V; tp = 300 µs
Fig 11. Drain current trip threshold as a function of
input-source voltage; typical values.
200
Tj(th)
(°C)
190
180
170
03pa76
2.5
VIS(th)
(V)
2
1.5
1
0.5
max.
03pa77
typ.
min.
160
0
2
4
6
8
10
VIS (V)
0
-50
0
50
100 Tj (°C) 150
VDS = 5 V; VIS = 5 V; tp = 300 µs
Fig 12. Overtemperature protection characteristic;
threshold junction temperature as a function of
input-source voltage; typical values.
Tj = 25 °C; VDS = 5 V; tp = 300 µs
Fig 13. Input-source threshold voltage as a function of
junction temperature.
9397 750 10955
Product data
Rev. 01 — 31 March 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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