BUK9215-55A Просмотр технического описания (PDF) - Philips Electronics
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BUK9215-55A Datasheet PDF : 13 Pages
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NXP Semiconductors
120
Pder
(%)
80
03aa16
40
0
0
50
100
150
200
Tmb (°C)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
BUK9215-55A
N-channel TrenchMOS logic level FET
80
ID
(A)
60
03nf79
Capped at 55 A due to limitation of bondwires
40
20
0
25 50 75 100 125 150 175 200
Tmb (°C)
Fig. 2. Continuous drain current as a function of
mounting base temperature
103
ID
(A)
102
RDSon = VDS / ID
03nf78
tp = 10 µs
100 µs
10 P
δ=
tp
T
tp
t
T
1
1
DC
10
VDS (V)
1 ms
10 ms
100 ms
102
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK9215-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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