BUK9215-55A Просмотр технического описания (PDF) - Philips Electronics
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BUK9215-55A Datasheet PDF : 13 Pages
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NXP Semiconductors
BUK9215-55A
N-channel TrenchMOS logic level FET
Symbol
Parameter
Conditions
LS
internal source
measured from source lead to source
inductance
bond pad
Source-drain diode
VSD
source-drain voltage IS = 20 A; VGS = 0 V; Tj = 25 °C; Fig. 14
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs;
Qr
recovered charge
VGS = -10 V; VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
-
7.5 -
nH
-
0.85 1.2 V
-
51
-
ns
-
102 -
nC
300
ID
(A)
250
200
150
9
8
7
6
VGS (V) = 10
03nb61
5
RDSon19
(mΩ)
18
17
16
15
14
03nf85
100
3
50
2.2
0
0
2
4
6
8
10
VDS (V)
13
12
11
10
3
6
9
12
15
VGS (V)
Fig. 5. Output characteristics: drain current as a
Fig. 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10- 1
ID
(A)
10- 2
10- 3
03aa35
min typ max
60
gfs
(S)
40
03nb58
10- 4
20
10- 5
10- 6
0
2
4
6
VGS (V)
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
0
0
20
40
60
80
100
ID (A)
Fig. 8. Forward transconductance as a function of
drain current; typical values
BUK9215-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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