BUK9606-75B Просмотр технического описания (PDF) - NXP Semiconductors.

Номер в каталоге

Компоненты Описание

производитель

BUK9606-75B

N-channel TrenchMOS logic level FET

NXP Semiconductors. 

BUK9606-75B

N-channel TrenchMOS logic level FET

Rev. 4 — 20 July 2011

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

 AEC Q101 compliant

 Low conduction losses due to low

on-state resistance

 Suitable for logic level gate drive

sources

 Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

 12 V, 24 V and 42 V loads

 Automotive systems

 General purpose power switching

 Motors, lamps and solenoids

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Min Typ Max Unit

VDS

drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C

-

-

75 V

ID

drain current

VGS = 5 V; Tmb = 25 °C;

[1] -

-

75 A

see Figure 1; see Figure 3

Ptot

total power dissipation Tmb = 25 °C; see Figure 2

Static characteristics

-

-

300 W

RDSon

drain-source on-state VGS = 10 V; ID = 25 A;

resistance

Tj = 25 °C

-

4.7 5.5 mΩ

VGS = 5 V; ID = 25 A;

-

5.2 6.1 mΩ

Tj = 25 °C;

see Figure 11; see Figure 12

Share Link: