BUL510 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

Номер в каталоге

Компоненты Описание

производитель

BUL510

Silicon Power Transistors

Quanzhou Jinmei Electronic 

Product Specification

Silicon Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

VCEO(SUS) Collector-emitter sustaining voltage

V(BR)EBO Emitter-base breakdwon voltage

VCEsat-1 Collector-emitter saturation voltage

VCEsat-2 Collector-emitter saturation voltage

VCEsat-3 Collector-emitter saturation voltage

VBEsat-1 Emitter-base saturation voltage

VBEsat-2 Emitter-base saturation voltage

ICBO

Collector cut-off current

ICEO

Collector cut-off current

hFE-1

DC current gain

hFE-2

DC current gain

Switching times inductive load

CONDITIONS

IC=100mA ;L=25mH

IE=10mA ;IC=0

IC=3A IB=0.6A

IC=4A IB=0.8A

IC=5A IB=1.25A

IC=3A IB=0.6A

IC=5A IB=1.25A

VCB=1000V IE=0

TC=125℃

VCE=450V IB=0

IC=1A ; VCE=5V

IC=10mA ; VCE=5V

ts

Storage time

tf

Fall time

IC=2.5A VCL=300V

IB1 =0.8A;IB2=-1.6A

L=200μH

www.jmnic.com

BUL510

MIN

TYP.

MAX UNIT

450

V

9

V

0.8

V

1.0

V

1.5

V

1.2

V

1.5

V

100

500

μA

250

μA

15

45

10

3.4

μs

0.15

μs

JMnic

Share Link: