BUZ73ALH Просмотр технического описания (PDF) - Infineon Technologies

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BUZ73ALH

SIPMOS ® Power Transistor

Infineon Technologies 

BUZ 73AL H

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Reverse Diode

Inverse diode continuous forward current

IS

TC = 25 ˚C

-

Inverse diode direct current,pulsed

ISM

TC = 25 ˚C

-

Inverse diode forward voltage

VSD

VGS = 0 V, IF = 14 A

-

Reverse recovery time

trr

VR = 100 V, IF=lS, diF/dt = 100 A/µs

-

Reverse recovery charge

Qrr

VR = 100 V, IF=lS, diF/dt = 100 A/µs

-

A

-

5.5

-

22

V

1.1

1.7

ns

140

-

µC

0.7

-

Rev. 2.4

Page 4

2009-11-10

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