BYG10D-E3/TR3(2020) Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

BYG10D-E3/TR3
(Rev.:2020)

Standard Avalanche SMD Rectifier

Vishay Semiconductors 

BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y

www.vishay.com

Vishay General Semiconductor

2000

1600

1200

800

TA = 100 °C

TA = 125 °C

TA = 75 °C

TA = 50 °C

TA = 25 °C

400

0

0

IR = 0.5 A, iR = 0.125 A

0.2

0.4

0.6

0.8

1.0

Forward Current (A)

Fig. 7 - Reverse Recovery Charge vs. Forward Current

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

SMA (DO-214AC)

Cathode Band

0.065 (1.65)

0.049 (1.25)

0.110 (2.79)

0.100 (2.54)

Mounting Pad Layout

0.066 (1.68)

MIN.

0.074 (1.88)

MAX.

0.090 (2.29)

0.078 (1.98)

0.060 (1.52)

0.030 (0.76)

0.177 (4.50)

0.157 (3.99)

0.012 (0.305)

0.006 (0.152)

0.060 (1.52)

MIN.

0.208 (5.28)

REF.

0.008 (0.203)

0 (0)

0.208 (5.28)

0.194 (4.93)

Revision:21-Feb-2020

4

Document Number: 88957

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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