BYV42E Просмотр технического описания (PDF) - Philips Electronics
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производитель
BYV42E Datasheet PDF : 7 Pages
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Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV42E, BYV42EB series
ESD LIMITING VALUE
SYMBOL PARAMETER
VC
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
8
UNIT
kV
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes
SOT78 package, in free air
SOT404 and SOT428 packages,
pcb mounted, minimum footprint,
FR4 board
MIN.
-
-
-
-
TYP.
-
-
60
50
MAX.
2.4
1.4
-
-
UNIT
K/W
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
VF
Forward voltage
IF = 15 A; Tj = 150˚C
IF = 15 A
IF = 30 A
IR
Reverse current
VR = VRWM; Tj = 100 ˚C
VR = VRWM
Qs
Reverse recovery charge
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
trr1
Reverse recovery time
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 100 A/µs
trr2
Reverse recovery time
IF = 0.5 A to IR = 1 A; Irec = 0.25 A
Vfr
Forward recovery voltage
IF = 1 A; dIF/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
-
TYP.
0.78
0.95
1.00
0.5
10
6
20
13
1
MAX.
0.85
1.05
1.20
1
100
15
28
UNIT
V
V
V
mA
µA
nC
ns
22 ns
-
V
July 1998
2
Rev 1.200
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