CAT5115PI-50SOIC Просмотр технического описания (PDF) - Catalyst Semiconductor => Onsemi
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CAT5115PI-50SOIC Datasheet PDF : 9 Pages
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CAT5115
OPERATION MODES
INC
High to Low
High to Low
X
CS
Low
Low
High
U/D
High
Low
X
Operation
Wiper toward H
Wiper toward L
Standby
RH
CH
Rwi
RW
CW
CL
RL
Potentiometer
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS
Supply Voltage
VCC to GND ...................................... –0.5V to +7V
Inputs
CS to GND .............................–0.5V to VCC +0.5V
INC to GND ............................–0.5V to VCC +0.5V
U/D to GND ............................–0.5V to VCC +0.5V
H to GND ................................–0.5V to VCC +0.5V
L to GND ................................–0.5V to VCC +0.5V
W to GND ............................... –0.5V to VCC +0.5V
Operating Ambient Temperature
Industrial (‘I’ suffix) ...................... – 40°C to +85°C
Junction Temperature ..................................... +150°C
Storage Temperature ....................... –65°C to +150°C
Lead Soldering (10 sec max) .......................... +300°C
* Stresses above those listed under Absolute Maximum Ratings may
cause permanent damage to the device. Absolute Maximum Ratings
are limited values applied individually while other parameters are
within specified operating conditions, and functional operation at any
of these conditions is NOT implied. Device performance and reliability
may be impaired by exposure to absolute rating conditions for extended
periods of time.
RELIABILITY CHARACTERISTICS
Symbol
VZAP(1)
ILTH(1)(2)
TDR
NEND
Parameter
ESD Susceptibility
Latch-Up
Data Retention
Endurance
Test Method
Min
Typ
MIL-STD-883, Test Method 3015
JEDEC Standard 17
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 1003
2000
100
100
1,000,000
Max
Units
Volts
mA
Years
Stores
DC Electrical Characteristics: VCC = +2.5V to +5.5V unless otherwise specified
Power Supply
Symbol Parameter
Conditions
Min Typ
VCC
Operating Voltage Range
2.5
—
ICC1
Supply Current (Increment)
VCC = 5.5V, f = 1MHz, IW=0
—
—
VCC = 5.5V, f = 250kHz, IW=0
—
—
ICC2
Supply Current (Write)
Programming, VCC = 5.5V
—
—
VCC = 3V
—
—
ISB1 (2)
Supply Current (Standby)
CS=VCC-0.3V
—
—
U/D, INC=VCC-0.3V or GND
Logic Inputs
Symbol Parameter
IIH
Input Leakage Current
IIL
Input Leakage Current
VIH1
TTL High Level Input Voltage
VIL1
TTL Low Level Input Voltage
VIH2
CMOS High Level Input Voltage
VIL2
CMOS Low Level Input Voltage
Conditions
VIN = VCC
VIN = 0V
4.5V ≤ VCC ≤ 5.5V
2.5V ≤ VCC ≤ 5.5V
Min
Typ
—
—
—
—
2
—
0
—
VCC x 0.7
—
-0.3
—
Max
5.5
100
50
1
500
1
Units
V
µA
mA
µA
µA
Max
10
–10
VCC
0.8
VCC + 0.3
VCC x 0.2
Units
µA
µA
V
V
V
V
NOTES:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to VCC + 1V
(3) IW=source or sink
(4) These parameters are periodically sampled and are not 100% tested.
3
Doc. No. 2117, Rev. E
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