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CR6CM-12B(2013) Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталоге
Компоненты Описание
производитель
CR6CM-12B
(Rev.:2013)
Renesas
Renesas Electronics 
CR6CM-12B Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
CR6CM-12B
Maximum Average Power Dissipation
(Single-Phase Half Wave)
16
14
12
10
θ = 30°
8
180°
120°
9
60°
6
θ
4
360°
2
Resistive,
inductive loads
0
0 2 4 6 8 10 12
Average On-State Current (A)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
16
14
12
θ = 30°
180°
120°
10
9
8
60°
6
4
θθ
2
360°
Resistive loads
0
0 2 4 6 8 10 12
Average On-State Current (A)
Maximum Average Power Dissipation
(Rectangular Wave)
16
14
9
12
60°
10
θ = 30°
8
DC
27
180°
120°
6
4
θ
360°
2
Resistive,
inductive loads
0
0 2 4 6 8 10 12
Average On-State Current (A)
R07DS0230EJ0300 Rev.3.00
Jul 30, 2013
Preliminary
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
160
140
θ
120
360°
100
Resistive,
inductive loads
80
180°
60
120°
40
9
20
60°
θ = 30°
0
0246
8 10 12
Average On-State Current (A)
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
160
140
θθ
120
360°
100
Resistive
loads
80
60
180°
40
120°
9
20
60°
θ = 30°
0
0 2 4 6 8 10 12
Average On-State Current (A)
Allowable Case Temperature vs.
Average On-State Current
(Rectangular Wave)
160
140
120
100
Resistive,
80
inductive loads θ
60
360°
40
20
180° 27
60°
θ = 30° 9120°
DC
0
0 2 4 6 8 10 12
Average On-State Current (A)
Page 4 of 8

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