CXT5551E Просмотр технического описания (PDF) - Central Semiconductor
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CXT5551E Datasheet PDF : 2 Pages
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CentralTM
Semiconductor Corp.
CXT5551E
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
♦ hFE
VCE=5.0V, IC=1.0mA
120
♦ hFE
VCE=5.0V, IC=10mA
120
♦ hFE
VCE=5.0V, IC=50mA
75
♦ hFE
VCE=10V, IC=150mA
25
fT
VCE=10V, IC=10mA, f=100MHz
100
Cob
VCB=10V, IE=0, f=1.0MHz
Cib
VEB=0.5V, IC=0, f=1.0MHz
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
NF
VCE=5.0V, IC=200μA, RS=10Ω
f=10Hz to 15.7kHz
♦ Enhanced Specification
SOT-89 CASE - MECHANICAL OUTLINE
MAX
300
300
6.0
20
200
8.0
UNITS
MHz
pF
pF
dB
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
MARKING CODE:
FULL PART NUMBER
R0 (10-May 2006)
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