DAP222WM(2011) Просмотр технического описания (PDF) - ROHM Semiconductor

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Компоненты Описание

производитель

DAP222WM
(Rev.:2011)

Switching Diode

ROHM Semiconductor 

DAP222WM

　

Data Sheet

20

IFSM

1cyc

15

8.3ms

10

5

AVE:2.50A

0

IFSM DISPERSION MAP

5

IFSM

4

8.3ms 8.3ms

1cyc

3

2

1

0

1

10

100

NUMBER OF CYCLES

IFSM-CYCLE CHARACTERISTICS

1000

Rth(j-a)

Rth(j-c)

100

Mounted on epoxy board

IM=100mA

IF=10A

10

0.001

1ms time

300us

0.01 0.1

1

10

100

TIME:t(s)

Rth-t CHARACTERISTICS

1000

50

IF=IR=100mA

IRR=0.1IR

40

30

20

AVE:19.3ns

10

0

trr DISPERSION MAP

100

IFSM

t

10

1

0.1

1

10

100

TIME:t(ms)

IFSM-t CHARACTERISTICS

10

9

8

7

6

5

4

AVE:2.98kV

3

AVE:1.47kV

2

1

0

C=200pF

R=0Ω

C=100pF

R=1.5kΩ

ESD DISPERSION MAP

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© 2011 ROHM Co., Ltd. All rights reserved.

3/3

2011.12 - Rev.A

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