DCR3910Y22 Просмотр технического описания (PDF) - Dynex Semiconductor

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DCR3910Y22

Phase Control Thyristor

Dynex Semiconductor 

SEMICONDUCTOR

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

VGT

Gate trigger voltage

VGD

Gate non-trigger voltage

IGT

Gate trigger current

IGD

Gate non-trigger current

Test Conditions

VDRM = 5V, Tcase = 25° C

At VDRM, Tcase = 125° C

VDRM = 5V, Tcase = 25° C

VDRM = 5V, Tcase = 25° C

DCR1840Y85

Max. Units

1.5

V

TBD

V

250 mA

TBD mA

CURVES

7000

6000

5000

min 125° C

max 125° C

min 25° C

max 25° C

4000

3000

2000

1000

0

0.0

2.0

4.0

6.0

Instantaneous on-state voltage VT - (V)

Fig.2 Maximum & minimum on-state characteristics

VTM EQUATION

VTM = A + Bln (IT) + C.IT+D.√IT

Where A = 0.398265

B = 0.121095

C = 0.000524

D = -0.000007

these values are valid for Tj = 125° C for IT 500A to 7200A

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