DF3A6.8FV Просмотр технического описания (PDF) - Toshiba
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DF3A6.8FV Datasheet PDF : 3 Pages
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DF3A6.8FV
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A6.8FV
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
• Because two devices are mounted on an ultra compact package, it is
possible to allow reducing the number of the parts and the mounting
cost.
Unit: mm
1.2±0.05
0.8±0.05
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Power dissipation
Junction temperature
Storage temperature range
P*
150
mW
Tj
150
°C
Tstg
−55~150
°C
VESM
1.CATHODE1
2.CATHODE2
3.ANODE
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
⎯
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
TOSHIBA
⎯
1-1Q1B
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.0015 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
0.5mm
0.45mm
0.45mm
0.4mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
VZ
ZZ
IR
CT
Test Condition
IZ = 5 mA
IZ = 5 mA
VR = 5 V
VR = 0, f = 1MHz
Min Typ. Max Unit
6.4 6.8 7.2
V
⎯
⎯
25
Ω
⎯
⎯
0.5
μA
―
45
―
pF
1
2007-11-01
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