DMG1013UW Просмотр технического описания (PDF) - Diodes Incorporated.
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производитель
DMG1013UW Datasheet PDF : 6 Pages
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DMG1013UW
1.6
10
1.2
0.8
ID = -1mA
ID = -250µA
0.4
8
6
TA = 25°C
4
2
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
100
f = 1MHz
Ciss
0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1,000
TA = 150°C
10
Coss
100
TA = 125°C
Crss
10
TA = 85°C
TA = 25°C
1
0
5
10
15
20
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
1
D = 0.7
D = 0.5
D = 0.3
1
0
4
8
12
16
20
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
0.1
D = 0.1
D = 0.05
D = 0.02
0.01 D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001 0.0001
D = 0.9
RJA(t) = r(t) * RJA
RJA = 504°C/W
P(pk)
t1
t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t1/t2
0.001
0.01
0.1
1
10
100
t1, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
1,000
DMG1013UW
Document number: DS31861 Rev. 3 - 2
4 of 6
www.diodes.com
September 2013
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