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DMV1500H Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
DMV1500H
ST-Microelectronics
STMicroelectronics 
DMV1500H Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
DMV1500H
Table 3: Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
Damper Modul.
VRRM Repetitive peak reverse voltage
1500
600
V
IFSM Surge non repetitive forward current tp = 10ms sinusoidal
80
35
A
Tstg Storage temperature range
-40 to +150
°C
Tj Maximum operating junction temperature
150
°C
Table 4: Thermal Resistance
Symbol
Parameter
Rth(j-c)
Junction to case thermal resistance
Value
3.6
Unit
°C/W
Table 5: Static Electrical Characteristics
Value
Symbol
Parameter
Test conditions
Tj = 25°C
Tj = 125°C
Typ. Max. Typ. Max.
IR *
VF **
Damper
Reverse leakage current
Modul.
Forward voltage drop
Damper
Modul.
VR = 1500 V
VR = 600 V
IF = 6 A
1.5
IF = 3 A
100 100 1000
20
3
50
2.3 1.25 1.7
1.8 1.1 1.4
Pulse test:
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses of the DAMPER and MODULATION diodes use the following equations :
DAMPER: P = 1.35 x IF(AV) + 0.59 x IF2(RMS)
MODULATION: P = 1.12 x IF(AV) + 0.092 x IF2(RMS)
Unit
µA
V
Table 6: Recovery Characteristics
Symbol
Parameter
Test conditions
IF = 100mA
IR =100mA
Tj = 25°C
trr
IRR = 10mA
Reverse recovery time
IF = 1A
dIF/dt = -50 A/µs Tj = 25°C
VR =30V
Value
Damper
Modul.
Typ. Max. Typ. Max.
625
110 350
95 125 35
50
Unit
ns
2/8

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