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DRA5143 Просмотр технического описания (PDF) - Panasonic Corporation
Номер в каталоге
Компоненты Описание
производитель
DRA5143
Transistors with Built-in Resistor / Silicon PNP epitaxial planar type
Panasonic Corporation
DRA5143 Datasheet PDF : 4 Pages
1
2
3
4
Doc No.
TT4-EA-11580
Revision.
3
Product Standards
Transistors with Built-in Resistor
DRA5143E0L
Technical Data ( reference )
PT - Ta
200
150
100
50
0
0 20 40 60 80 100 120 140 160 180 200
Ambient temperature Ta (
℃
)
IC - VCE
-0.12
-0.1
-0.08
Ta = 25
℃
IB= -800
μ
A
-700
μ
A
-600
μ
A
-0.06
-0.04
-500
μ
A
-400
μ
A
-300
μ
A
-0.02
-200
μ
A
-0
-0
-100
μ
A
-2
-4
-6
-8
-10 -12
Collector-emitter voltage VCE (V)
hFE - IC
200
180
VCE = -10 V
160
140
Ta = 85
℃
120
100
25
℃
80
60
40
20
0
-0.0001
-0.001
-0.01
Collector current IC (A)
-40
℃
-0.1
VCE(sat) - IC
-10
IC/IB = 20
-1
Ta = 85
℃
25
℃
-0.1
-0.01
-0.0001
-40
℃
-0.001
-0.01
-0.1
Collector current IC (A)
-1.0E-02
-1.0E-03
Io - VIN
Vo = -5 V
Ta = 85
℃
-1.0E-04
25
℃
-1.0E-05
-1.0E-06
-0
-40
℃
-0.5
-1
-1.5
-2
Input voltage VIN (V)
VIN - Io
-100
Vo = -0.2 V
-10
Ta = -40
℃
25
℃
-1
85
℃
-0.1
-0.0001
-0.001
-0.01
-0.1
Output current Io (A)
Page 2 of 3
Established : 2009-10-14
Revised : 2014-02-21
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