ECH8652 Просмотр технического описания (PDF) - SANYO -> Panasonic

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производитель

ECH8652

P-Channel Silicon MOSFET

SANYO -> Panasonic 

Ordering number : ENA0935A

ECH8652

SANYO Semiconductors

DATA SHEET

ECH8652

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

Features

• Low ON-resistance

• 1.8V drive

• Composit type, facilitating high-density mounting

• Halogen free compliance

• Protection diode in

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Total Power Dissipation

Channel Temperature

Storage Temperature

Symbol

VDSS

VGSS

ID

IDP

PD

PT

Tch

Tstg

Conditions

PW≤10μs, duty cycle≤1%

When mounted on ceramic substrate (900mm2×0.8mm) 1unit

When mounted on ceramic substrate (900mm2×0.8mm)

Ratings

Unit

--12

V

±10

V

--6

A

--40

A

1.3

W

1.5

W

150

°C

--55 to +150

°C

Package Dimensions

unit : mm (typ)

7011A-001

Top View

2.9

8

5

ECH8652-TL-H

0.15

0 t o 0.02

Product & Package Information

• Package

: ECH8

• JEITA, JEDEC

:-

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type : TL

Marking

WX

TL

LOT No.

1

4

0.65

0.3

Bot t om View

1 : Source1

2 : Gate1

3 : Source2

4 : Gate2

5 : Drain2

6 : Drain2

7 : Drain1

8 : Drain1

SANYO : ECH8

Electrical Connection

8

7

6

5

1

2

3

4

http://semicon.sanyo.com/en/network

62012 TKIM/O0108PE TIIM TC-00001630 No. A0935-1/7

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