FDD6632 Просмотр технического описания (PDF) - Fairchild Semiconductor
Номер в каталоге
Компоненты Описание
производитель
FDD6632 Datasheet PDF : 11 Pages
| |||
PSPICE Electrical Model
.SUBCKT FDD6632 2 1 3 ; rev March 2002
Ca 12 8 1.8e-10
Cb 15 14 1.9e-10
Cin 6 8 2.35e-10
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 32.05
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
Lgate 1 9 3.84e-9
Ldrain 2 5 1.00e-9
Lsource 3 7 4e-9
RLgate 1 9 38.4
RLdrain 2 5 10
RLsource 3 7 40
DPLCAP 5
10
RSLC2
RSLC1
51
5
51
ESLC
DBREAK
11
LDRAIN
DRAIN
2
RLDRAIN
GATE
1
-
50
+
ESG
6
8
+
RDRAIN
EVTHRES
16
17
EBREAK 18
-
LGATE
EVTEMP
+ 19 - 21
8
MWEAK
RGATE + 18 - 6
9
20 22
MMED
RLGATE
MSTRO
DBODY
CIN
8
LSOURCE
7
SOURCE
3
RSOURCE
RLSOURCE
S1A
12 13
8
S2A
14
15
13
RBREAK
17
18
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 12e-3
Rgate 9 20 4.2
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 3e-2
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
S1B
S2B
CA
13
CB
+
+ 14
EGS
6
8
-
EDS
5
8
-
RVTEMP
19
IT
-
VBAT
+
8
22
RVTHRES
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*40),3))}
.MODEL DbodyMOD D (IS=9.5E-12 RS=2.3e-2 XTI=1 IKF=15.00 N=1.15 TRS1=1.0e-3 TRS2=8.0e-7
+ CJO=1.7e-10 TT=7e-9 M=0.47)
.MODEL DbreakMOD D (RS=1e-1 TRS1=1.12e-3 TRS2=1.25e-6)
.MODEL DplcapMOD D (CJO=8.1e-11 IS=1e-30 N=10 M=0.43)
.MODEL MmedMOD NMOS (VTO=1.76 KP=.6 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=4.2)
.MODEL MstroMOD NMOS (VTO=2.08 KP=9 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=1.52 KP=0.03 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=42 RS=.1)
.MODEL RbreakMOD RES (TC1=1.01e-3 TC2=1.00e-7)
.MODEL RdrainMOD RES (TC1=9e-3 TC2=4e-5)
.MODEL RSLCMOD RES (TC1=5E-3 TC2=1E-6)
.MODEL RsourceMOD RES (TC1=1.0e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-1.5e-3 TC2=-7e-6)
.MODEL RvtempMOD RES (TC1=-1.8e-3 TC2=1.2e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-1.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.5 VOFF=-4)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.6 VOFF=-0.1)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.1 VOFF=-0.6)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
©2004 Fairchild Semiconductor Corporation
FDD6632 Rev. B1
Share Link: 