FGH40N60UFTU-SN00007 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FGH40N60UFTU-SN00007 Datasheet PDF : 8 Pages
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Package Marking and Ordering Information
Part Number Top Mark Package Packing Method
FGH40N60UFTU FGH40N60UF TO-247
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
BVCES
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 250 A
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250 A, VCE = VGE
IC = 40 A, VGE = 15 V
IC = 40 A, VGE = 15 V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 400 V, IC = 40 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 25oC
VCC = 400 V, IC = 40 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 125oC
VCE = 400 V, IC = 40 A,
VGE = 15 V
600
-
-
V
-
0.6
-
V/oC
-
-
250
A
-
-
±400
nA
4.0
5.0
6.5
V
-
1.8
2.4
V
-
2.0
-
V
-
2110
-
pF
-
200
-
pF
-
60
-
pF
-
24
-
ns
-
44
-
ns
-
112
-
ns
-
30
60
ns
-
1.19
-
mJ
-
0.46
-
mJ
-
1.65
-
mJ
-
24
-
ns
-
45
-
ns
-
120
-
ns
-
40
-
ns
-
1.2
-
mJ
-
0.69
-
mJ
-
1.89
-
mJ
-
120
-
nC
-
14
-
nC
-
58
-
nC
©2008 Fairchild Semiconductor Corporation
2
FGH40N60UF Rev. C1
www.fairchildsemi.com
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