FQP6N90C Просмотр технического описания (PDF) - Fairchild Semiconductor

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Компоненты Описание

производитель

FQP6N90C

N-Channel QFET® MOSFET 900 V, 6.0 A, 2.3Ω

Fairchild Semiconductor 

Same Type

VGS

50KΩ

as DUT

Qg

12V

200nF

300nF

10V

VGS

VDS

Qgs

Qgd

IG = co3nmsAt.

DUT

Charge

Figure 12. Gate Charge Test Circuit & Waveform

V10GVS

VDS

VGS

RG

RL

VDD

DUT

VDS

90%

VGS 10%

td(on)

tr

t on

td(off)

tf

t off

Figure 13. Resistive Switching Test Circuit & Waveforms

V1G0GVSS

tp

VDS

ID

RG

L

EAS

=

--1--

2

L IAS2

BVDSS

--------------------

BVDSS - VDD

BVDSS

IAS

VDD

ID (t)

DUT

VDD

VDS (t)

tp

Time

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

©2006 Fairchild Semiconductor Corporation

6

FQP6N90C / FQPF6N90C Rev. C1

www.fairchildsemi.com

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