FZT855TA Просмотр технического описания (PDF) - Diodes Incorporated.
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FZT855TA Datasheet PDF : 7 Pages
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A Product Line of
Diodes Incorporated
FZT855
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Symbol
BVCBO
BVCER
BVCEO
BVEBO
Min Typ
250 375
250 375
150 180
7
8
Collector Cut-off Current
ICBO
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
DC Current Gain (Note 9)
ICER
R ≤ 1kΩ
IEBO
VCE(sat)
VBE(sat)
VBE(on)
hFE
20
35
60
260
100 200
100 200
15
30
10
Current Gain-Bandwidth Product (Note 9)
fT
Output Capacitance (Note 9)
Switching Times
Cobo
ton
toff
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
90
22
66
2130
Max
50
1
50
1
10
40
65
110
355
1250
1100
300
Unit
V
V
V
V
nA
µA
nA
µA
nA
mV
mV
mV
MHz
pF
ns
ns
Test Condition
IC = 100µA
IC = 1µA,RB ≤ 1kΩ
IC = 1mA
IE = 100µA
VCB = 200V
VCB = 200V, @TA = +100°C
VCB = 200V
VCB = 200V, @TA = +100°C
VEB = 6V
IC = 100mA, IB = 5mA
IC =500mA, IB = 50mA
IC =1A, IB = 100mA
IC =5A, IB = 500mA
IC =5A, IB = 500mA
IC = 5A, VCE = 5V
IC = 10mA, VCE = 5V
IC = 1A, VCE = 5V
IC = 5A, VCE = 5V
IC = 10A, VCE = 5V
VCE = 10V, IC = 100mA
f = 50MHz
VCB = 10V. f = 1MHz
IC = 1A, VCC = 50V
IB1 = -IB2 = 100mA
FZT855
Document Number DS33176 Rev. 5 - 2
4 of 7
www.diodes.com
March 2013
© Diodes Incorporated
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