GA100TS120UPBF Просмотр технического описания (PDF) - Vishay Semiconductors
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GA100TS120UPBF Datasheet PDF : 10 Pages
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GA100TS120UPbF
"Half-Bridge" IGBT INT-A-PAK Vishay High Power Products
(Ultrafast Speed IGBT), 100 A
40
35
30
25
20
10
20
30
40
50
RG - Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
100
IC = 200 A
IC = 100 A
10
IC = 50 A
300
VGE = 20 V
TJ = 125 °C
VCE measured at terminal (peak voltage)
200
100
Safe operating area
0
0
300
600
900 1200 1500
VCE - Collector to Emitter Voltage (V)
Fig. 12 - Reverse Bias SOA
1000
100
TJ = 125 °C
TJ = 25 °C
10
1
0
30
60
90
120
150
TJ - Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
60
50
40
30
20
10
0
0
50
100
150
200
IC - Collector Current (A)
Fig. 11 - Typical Switching Losses vs. Collector Current
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VF - Forward Voltage Drop (V)
Fig. 13 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
16 000
12 000
VR = 720 V
TJ = 125 °C
TJ = 25 °C
8000
4000
0
400
IF = 200 A
IF = 100 A
IF = 50 A
800
1200
1600
2000
dIF/dt (A/µs)
Fig. 14 - Typical Stored Charge vs. dIF/dt
Document Number: 94428
Revision: 04-May-10
For technical questions, contact: indmodules@vishay.com
www.vishay.com
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