HFA1100
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as
application and design information only. No guarantee is implied.
TYPICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: VSUPPLY = ±5V, RF = 360Ω, AV = +2V/V, RL = 100Ω, Unless Otherwise Specified
PARAMETERS
Input Offset Voltage *
Average Offset Voltage Drift
VIO CMRR
VIO PSRR
+Input Current *
Average +Input Current Drift
- Input Current *
Average -Input Current Drift
+Input Resistance
- Input Resistance
Input Capacitance
Input Noise Voltage *
+Input Noise Current *
-Input Noise Current *
CONDITIONS
VCM = 0V
Versus Temperature
∆VCM = ±2V
∆VS = ±1.25V
VCM = 0V
Versus Temperature
VCM = 0V
Versus Temperature
∆VCM = ±2V
f = 100kHz
f = 100kHz
f = 100kHz
TEMPERATURE
+25oC
Full
+25oC
+25oC
+25oC
Full
+25oC
Full
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
TYPICAL
2
10
46
50
25
40
12
40
50
16
2.2
4
18
21
Input Common Mode Range
Open Loop Transimpedance
Output Voltage
Output Current *
DC Closed Loop Output
Resistance
AV = -1
AV = -1, RL = 100Ω
AV = -1, RL = 100Ω
AV = -1, RL = 50Ω
AV = -1, RL = 50Ω
Full
+25oC
+25oC
Full
+25oC to +125oC
-55oC to 0oC
+25oC
±3.0
500
±3.3
±3.0
±65
±50
0.1
Quiescent Supply Current *
-3dB Bandwidth *
Slew Rate
Full Power Bandwidth
Gain Flatness *
Linear Phase Deviation *
RL = Open
AV = -1, RF = 430Ω, VOUT = 200mVP-P
AV = +1, RF = 510Ω, VOUT = 200mVP-
P
AV = +2, RF = 360Ω, VOUT = 200mVP-
P
AV = +1, RF = 510Ω, VOUT = 5VP-P
AV = +2, VOUT = 5VP-P
VOUT = 5VP-P
To 30MHz, RF = 510Ω
To 50MHz, RF = 510Ω
To 100MHz, RF = 510Ω
To 100MHz, RF = 510Ω
Full
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
24
580
850
670
1500
2300
220
±0.014
±0.05
±0.14
±0.6
UNITS
mV
µV/oC
dB
dB
µA
nA/oC
µA
nA/oC
kΩ
Ω
pF
nV/√Hz
pA/√Hz
pA/√Hz
V
kΩ
V
V
mA
mA
Ω
mA
MHz
MHz
MHz
V/µs
V/µs
MHz
dB
dB
dB
Degrees
Spec Number 511104-883
188