HY27UA081G1M-FCS Просмотр технического описания (PDF) - Hynix Semiconductor

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HY27UA081G1M-FCS

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

Hynix Semiconductor 

HY27UA(08/16)1G1M Series

HY27SA(08/16)1G1M Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Once the Read A and Read C commands have been issued the pointer remains in the respective areas until another

pointer code is issued. However, the Read B command is effective for only one operation, once an operation has been

executed in Area B the pointer returns automatically to Area A.

The pointer operations can also be used before a program operation, that is the appropriate code (00h, 01h or 50h)

can be issued before the program command 80h is issued (see Figure 9).

x8 Devices

Area A

(00h)

Area B

(01h)

Area C

(50h)

Bytes 0-255

Bytes 256-511

Bytes

512-527

x16 Devices

Area A

(00h)

Word 0-256

Area C

(50h)

Words

256-263

A

B

C

Page Buffer

A

C

Page Buffer

Pointer

(00h, 01h, 50h)

Figure 8. Pointer Operation

Pointer

(00h, 50h)

AREA A

I/O

00h

80h

Address

Inputs

Data

Input

10h

00h

80h

Address

Inputs

Data

Input

10h

AREA A, B, C can be programmed depending on how much data is input.

Subsequent 00h commands can be omitted.

AREA B

I/O

01h

80h

Address

Inputs

Data

Input

10h

01h

80h

Address

Inputs

Data

Input

10h

AREA B, C can be programmed depending on how much data is input.

The 01h command must be re-issued before each program.

AREA C

I/O

50h

80h

Address

Inputs

Data

Input

10h

50h

80h

Only Areas C can be programmed.

Subsequent 50h commands can be omitted.

Address

Inputs

Data

Input

10h

Figure 9. Pointer Operations for Programming

Rev 0.5 / Oct. 2004

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