IRF6609(2004) Просмотр технического описания (PDF) - International Rectifier

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Компоненты Описание

производитель

IRF6609
(Rev.:2004)

HEXFET Power MOSFET

International Rectifier 

IRF6609

100000

10000

1000

VGS = 0V, f = 1 MHZ

Ciss = C gs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

Coss

Crss

100

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

12

ID= 17A

10

VDS= 20V

VDS= 10V

8

6

4

2

0

0 20 40 60 80 100 120

QG Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

1000.0

100.0

10.0

TJ = 150°C

1000

100

10

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µsec

1.0

TJ = 25°C

0.1

0.0

VGS = 0V

0.4

0.8

1.2

1.6

2.0

VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

1

Tc = 25°C

Tj = 150°C

Single Pulse

0.1

0

1

1msec

10msec

10

100

VDS , Drain-toSource Voltage (V)

Fig 8. Maximum Safe Operating Area

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