IRF7307 Просмотр технического описания (PDF) - International Rectifier

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производитель

IRF7307

HEXFET Power MOSFET

International Rectifier 

IRF7307

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

Parameter

Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(ON)

Static Drain-to-Source On-Resistance

VGS(th)

gfs

Gate Threshold Voltage

Forward Transconductance

IDSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

LD

LS

Ciss

Coss

Crss

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Drain Inductace

Internal Source Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min. Typ. Max. Units

N-Ch 20 — —

P-Ch -20 — — V

N-Ch — 0.044 —

P-Ch — -0.012 — V/°C

N-Ch

—

—

P-Ch

—

—

— 0.050

— 0.070

— 0.090 Ω

— 0.140

N-Ch 0.70 — —

P-Ch -0.70 — — V

N-Ch 8.30 — —

P-Ch 4.00 — — S

N-Ch — — 1.0

P-Ch — — -1.0

N-Ch — — 25 µA

P-Ch — — -25

N-P –– — ±100

N-Ch — — 20

P-Ch — — 22

N-Ch — — 2.2

P-Ch — — 3.3 nC

N-Ch — — 8.0

P-Ch — — 9.0

N-Ch — 9.0 —

P-Ch — 8.4 —

N-Ch — 42 —

P-Ch — 26 —

N-Ch — 32 — ns

P-Ch — 51 —

N-Ch — 51 —

P-Ch — 33 —

N-P — 4.0 —

N-P — 6.0 — nH

N-Ch — 660 —

P-Ch — 610 —

N-Ch — 280 —

P-Ch — 310 — pF

N-Ch — 140 —

P-Ch — 170 —

Conditions

VGS = 0V, ID = 250µA

VGS = 0V, ID = -250µA

Reference to 25°C, ID = 1mA

Reference to 25°C, ID = -1mA

VGS = 4.5V, ID = 2.6A ƒ

VGS = 2.7V, ID = 2.2A ƒ

VGS = -4.5V, ID = -2.2A ƒ

VGS = -2.7V, ID = -1.8A ƒ

VDS = VGS, ID = 250µA

VDS = VGS, ID = -250µA

VDS = 15V, ID = 2.6A ƒ

VDS = -15V, ID = -2.2A ƒ

VDS = 16V, VGS = 0V

VDS = -16V, VGS = 0V,

VDS = 16V, VGS = 0V, TJ = 125°C

VDS = -16V, VGS = 0V, TJ = 125°C

VGS = ± 12V

N-Channel

ID = 2.6A, VDS = 16V, VGS = 4.5V

ƒ

P-Channel

ID = -2.2A, VDS = -16V, VGS = -4.5V

N-Channel

VDD = 10V, ID = 2.6A, RG = 6.0Ω,

RD = 3.8Ω

ƒ

P-Channel

VDD = -10V, ID = -2.2A, RG = 6.0Ω,

RD = 4.5Ω

Between lead tip

and center of die contact

N-Channel

VGS = 0V, VDS = 15V, ƒ = 1.0MHz

ƒ

P-Channel

VGS = 0V, VDS = -15V, ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current (Body Diode)

ISM

Pulsed Source Current (Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 23 )

Min. Typ. Max. Units

Conditions

N-Ch — — 2.5

P-Ch — — -2.5 A

N-Ch — — 21

P-Ch — — -17

N-Ch — — 1.0 V

P-Ch — — -1.0

TJ = 25°C, IS = 1.8A, VGS = 0V ƒ

TJ = 25°C, IS = -1.8A, VGS = 0V ƒ

N-Ch — 29 44 ns N-Channel

P-Ch — 56 84

TJ = 25°C, IF = 2.6A, di/dt = 100A/µs

N-Ch — 22 33 nC P-Channel

ƒ

P-Ch — 71 110

TJ = 25°C, IF = -2.2A, di/dt = 100A/µs

N-P Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)

ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.

‚ N-Channel ISD ≤ 2.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C

P-Channel ISD ≤ -2.2A, di/dt ≤ 50A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C

„ Surface mounted on FR-4 board, t ≤ 10sec.

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