IRFS4310ZPBF Просмотр технического описания (PDF) - International Rectifier
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IRFS4310ZPBF Datasheet PDF : 11 Pages
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IRFB/S/SL4310ZPbF
1000
100
TJ = 175°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
140
LIMITED BY PACKAGE
120
100
80
60
40
20
0
25
50 75 100 125 150 175
TC, Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20
40
60
80
100
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1msec 100μsec
10msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1
DC
10
100
VDS, Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
130
ID = 5mA
120
110
100
90
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Drain-to-Source Breakdown Voltage
2000
1600
1200
ID
TOP
18A
29A
BOTTOM 58A
800
400
0
25
50
75
100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
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