IS42S16800A-7TI Просмотр технического описания (PDF) - Integrated Silicon Solution

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IS42S16800A-7TI

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

Integrated Silicon Solution 

IS42S81600A, IS42S16800A, IS42S32400A

ISSI ®

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

VDD MAX

VDDQ MAX

VIN

VOUT

PD MAX

ICS

TOPR

TSTG

Parameters

Maximum Supply Voltage

Maximum Supply Voltage for Output Buffer

Input Voltage

Output Voltage

Allowable Power Dissipation

Output Shorted Current

Operating Temperature

Com.

Ind.

Storage Temperature

Rating

–0.5 to +4.6

0.5 to +4.6

–0.5 to +4.6

–0.5 to +4.6

1

50

0 to +70

–40 to +85

–55 to +125

Unit

V

V

V

V

W

mA

°C

°C

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to

the device. This is a stress rating only and functional operation of the device at these or any other condi-

tions above those indicated in the operational sections of this specification is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect reliability.

2. All voltages are referenced to Vss.

DC RECOMMENDED OPERATING CONDITIONS(2) (At TA = 0 to +70°C)

Symbol

Parameter

VDD

VDDQ

VIH(1)

VIL(2)

Supply Voltage

I/O Supply Voltage

Input High Voltage

Input Low Voltage

Note:

1. VIH (max) = VDDQ +1.5V (PULSE WIDTH < 5NS).

2. VIL (min) = -1.5V (PULSE WIDTH < 5NS).

Min.

3.0

3.0

2.0

-0.3

Typ.

3.3

3.3

—

—

Max. Unit

3.6

V

3.6

V

VDDQ + 0.3 V

+0.8

V

CAPACITANCE CHARACTERISTICS (At TA = 0 to +25°C, VDD = VDDQ= 3.3 ± 0.3V, f = 1 MHz)

Symbol

CIN1

CIN2

CI/O

Parameter

Input Capacitance: CLK

Input Capacitance:All other input pins

Data Input/Output Capacitance:I/Os

Typ.

—

—

—

Max. Unit

3.5

pF

3.8

pF

6.5

pF

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

15

PRELIMINARYINFORMATION Rev. 00C

01/20/05

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