IXFH6N120P(2015) Просмотр технического описания (PDF) - IXYS CORPORATION
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Компоненты Описание
производитель
IXFH6N120P Datasheet PDF : 6 Pages
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Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
RGi
Gate Input Resistance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3 (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
RthCS
TO-220
TO-247
IXFA6N120P IXFP6N120P
IXFH6N120P
Characteristic Values
Min. Typ. Max
3.0
5.0
S
TO-220 Outline
1.8
2830
pF
150
pF
30
pF
24
ns
11
ns
60
ns
14
ns
92
nC
15
nC
50
nC
Pins: 1 - Gate
3 - Source
2 - Drain
0.50
0.21
0.50 °C/W
°C/W
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IF = 3A, VGS = 0V
IRM
-di/dt = 100A/s
QRM
VR = 100V
Note 1: Pulse test, t 300s, duty cycle, d 2%.
Characteristic Values
Min. Typ. Max
6A
24 A
1.4 V
300 ns
7.8
A
1.1
μC
TO-263 Outline
1. Gate
2,4. Drain
3. Source
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
Millimeter
Min. Max.
4.06 4.83
0.51 0.99
1.14 1.40
0.40 0.74
1.14 1.40
8.64 9.65
8.00 8.89
9.65 10.41
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
Inches
Min. Max.
.160 .190
.020 .039
.045 .055
.016 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .005
TO-247 Outline
1 - Gate
2,4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537
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