K4E641612D-T Просмотр технического описания (PDF) - Samsung

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производитель

K4E641612D-T

4M x 16bit CMOS Dynamic RAM with Extended Data Out

Samsung 

Industrial Temperature

K4E661612D,K4E641612D

WORD READ CYCLE

CMOS DRAM

V IH -

RAS

V IL -

V IH -

UCAS

V IL -

V IH -

LCAS

V IL -

V IH -

A

V IL -

V IH -

W

V IL -

V IH -

OE

V IL -

DQ0 ~ DQ7

VOH -

VOL -

DQ8 ~ DQ15

VOH -

VOL -

t RC

tR A S

tC R P

tRCD

tC S H

t RSH

tC A S

tC R P

tRCD

tC S H

tR S H

tC A S

tASR

tR A D

tR A H

tASC

ROW

ADDRESS

tC A H

COLUMN

ADDRESS

tRAL

tR C S

tR P

tC R P

tC R P

tR R H

tRCH

OPEN

t RAC

OPEN

t RAC

tAA

tOLZ

tOEA

tC A C

t CLZ

tC A C

tCLZ

tOEZ

DATA-OUT

tOEZ

DATA-OUT

tCEZ

tCEZ

D o n ′t care

Undefined

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