K4S56163PF-F75 Просмотр технического описания (PDF) - Samsung

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производитель

K4S56163PF-F75

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Samsung 

K4S56163PF - R(B)G/F

Mobile-SDRAM

DC CHARACTERISTICS

Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25°C ~ 85°C for Extended, -25°C ~ 70°C for Commercial)

Parameter

Symbol

Test Condition

Version

-75 -90 -1L

Unit Note

Operating Current

(One Bank Active)

Burst length = 1

ICC1 tRC ≥ tRC(min)

IO = 0 mA

50

45

40 mA 1

Precharge Standby Current in ICC2P CKE ≤ VIL(max), tCC = 10ns

power-down mode

ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞

0.3

mA

0.3

Precharge Standby Current

ICC2N

CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

10

in non power-down mode

ICC2NS

CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

1

mA

Active Standby Current

in power-down mode

ICC3P CKE ≤ VIL(max), tCC = 10ns

ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞

5

mA

1

Active Standby Current

ICC3N

CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

20

mA

in non power-down mode

(One Bank Active)

ICC3NS

CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

5

mA

Operating Current

(Burst Mode)

ICC4

IO = 0 mA

Page burst

4Banks Activated

tCCD = 2CLKs

75

60

60 mA 1

Refresh Current

ICC5 tARFC ≥ tARFC(min)

85

85

85 mA 2

Internal TCSR Max 40 Max 70/85 °C

Self Refresh Current

ICC6 CKE ≤ 0.2V

Full Array

200

1/2 of Full Array

160

450

300

uA

1/4 of Full Array

140

250

NOTES:

1. Measured with outputs open.

2. Refresh period is 64ms.

3. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).

5

September 2004

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