KMZ10 Просмотр технического описания (PDF) - Philips Electronics
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KMZ10 Datasheet PDF : 8 Pages
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Philips Semiconductors
Magnetic field sensor
Product specification
KMZ10A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
VALUE
180
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C; Hx = 0.5 kA/m; notes 1 and 2; VCC = 5 V unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
Hy
magnetic field strength
note 2
S
sensitivity
notes 2 and 3
−0.5
−
13
−
TCVO
temperature coefficient of
output voltage
Rbridge
TCRbridge
Voffset
TCVoffset
bridge resistance
temperature coefficient of
bridge resistance
offset voltage
offset voltage drift
VCC = 5 V;
Tamb = −25 to +125 °C
ICC = 3 mA;
Tamb = −25 to +125 °C
Tbridge = −25 to +125 °C
Tbridge = −25 to +125 °C
−
−
0.8
−
−1.5
−6
−0.4
−0.15
−
0.25
−
−
FL
linearity deviation of output Hy = 0 to ±0.25 kA/m
−
−
voltage
Hy = 0 to ±0.4 kA/m
−
−
Hy = 0 to ±0.5 kA/m
−
−
FH
hysteresis of output voltage
−
−
f
operating frequency
0
−
MAX.
+0.5
19
−
UNIT
kA/m
m-k---A--V----⁄-⁄--m-V--
%/K
−
%/K
1.6
kΩ
−
%/K
+1.5
mV/V
+6
µ----V--K----⁄--V---
0.8
%⋅FS
2.5
%⋅FS
4.0
%⋅FS
0.5
%⋅FS
1
MHz
Notes
1. Before first operation or after operation outside the SOAR (Fig.4) the sensor has to be reset by application of an
auxiliary field Hx = 3 kA/m.
2. No disturbing field (Hd) allowed; for stable operation under disturbing conditions see Fig.4 (SOAR) and see Fig.5 for
decrease of sensitivity.
3. S = -(---V----O------a----t---H-----y----=------0---.--4---0--k-.--4A-----×-⁄--m--V----)C----C–------(--V-----O-----a----t---H-----y----=------0---)- .
1998 Mar 24
4
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