KSB1017 Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
KSB1017 Datasheet PDF : 4 Pages
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Typical Characteristics
-4.0
-3.2
-2.4
-1.6
IB = -140mA
IB = -180mA
IB = -160mA
IB = -120mA
IB = -100mA
IB = -80mA
IB = -60mA
IB = -40mA
IB = -20mA
-0.8
-0.0
-0
IB = 0A
-1
-2
-3
-4
-5
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-10
IC=10IB
-1
-0.1
-0.01
-1E-3
-0.01
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
-100
-10 IC(max). (Pulse)
IC(max). (DC)
-1
1s
DC
10ms
-0.1
-1
-10
-100
-1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2000 Fairchild Semiconductor International
1000
100
VCE = -5V
10
1
-1E-3
-0.01
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
-4
VCE = -5V
-3
-2
-1
-0
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
40
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
200
TC[oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, February 2000
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