KSB1121 Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге

Компоненты Описание

производитель

KSB1121

PNP Epitaxial Planar Silicon Transistor

Fairchild Semiconductor 

July 2005

KSB1121

PNP Epitaxial Planar Silicon Transistor

High Current Driver Applications

• Low Collector-Emitter Saturation Voltage

• Large Current Capacity

• Fast Switching Speed

• Complement to KSD1621

Marking

1

SOT-89

1. Base 2. Collector 3. Emitter

11

PY

Absolute Maximum Ratings Ta = 25°C unless otherwise noted

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current

PC

Collector Power Dissipation

PC*

TJ

Junction Temperature

TSTG

Storage Temperature

* Mounted on Ceramic Board (250mm2 x 0.8mm)

Electrical Characteristics Ta = 25°C unless otherwise noted

Symbol

Parameter

Test Condition

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE1

hFE2

VCE (sat)

VBE (sat)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

IC = -10µA, IE = 0

IC = -1mA, IB = 0

IE = -10µA, IC = 0

VCB = -20V, IE = 0

VBE = -4V, IC = 0

VCE = -2V, IC = -0.1A

VCE = -2V, IC = -1.5A

IC = -1.5A, IB = -75mA

IC = -1.5A, IB = -75mA

21

WW

Weekly code

Year code

hFE grage

Ratings

-30

-25

-6

-2

500

1.3

150

-55 ~ 150

Units

V

V

V

A

mW

W

°C

°C

Min.

-30

-25

-6

100

65

Typ.

-0.35

-0.85

Max.

-100

-100

560

Units

V

V

V

nA

nA

-0.6

V

-1.2

V

©2005 Fairchild Semiconductor Corporation

1

KSB1121 Rev. B1

www.fairchildsemi.com

Share Link: