KSB817 Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге

Компоненты Описание

производитель

KSB817

PNP Planar Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

-0

-0

IB=-240mA

IB=-200mA

IB=-160mA

IB=-120mA

IB=-80mA

IB=-40mA

IB=-20mA

-5 -10 -15 -20 -25 -30 -35 -40 -45 -50

VCE(V),COLLECTOR EMITTER VOLTAGE

Figure 1. Static Characteristic

-10

IC=10IB

-1

-0.1

-0.01

-0.1

-1

-10

IC(A) COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage

-8

VCE=-5V

-7

-6

-5

-4

-3

-2

-1

-0

-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6

VBE(V), BASE EMITTER VOLTAGE

Figure 5. Base-Emitter On Voltage

©2000 Fairchild Semiconductor International

1000

100

VCE=-5V

10

1

-0.1

-1

-10

-100

IC(A) COLLECTOR CURRENT

Figure 2. DC current Gain

-10

IC=10IB

-1

-0.1

-0.1

-1

-10

IC(A) COLLECTOR CURRENT

Figure 4. Base-Emitter Saturation Voltage

1000

f=1MHz

100

10

-1

-10

-100

VCB(V) COLLECTOR BASE VOLTAGE

Figure 6. Collector Output Capacitance

Rev. B, November 2000

Share Link: