Philips Semiconductors
Downconverter for DVB
Product specification
TDA9829T
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
thermal resistance from junction
to ambient
CONDITIONS
in free air
VALUE
85
UNIT
K/W
CHARACTERISTICS
VP = 5 V; Tamb = 25 °C; see Table 1 for input frequencies; input level ViIF(3−4) = 10 mV (RMS value); measurements
taken in Fig.8; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Supply (pin 19)
VP
supply voltage
note 1
4.5
IP
supply current
81
IF amplifier (measured at fIF = 43.75 MHz; pins 3 and 4)
∆V(3-4)(rms)
Vi(3-4)(rms)
input sensitivity (RMS value)
maximum input signal level
(RMS value)
−1 dB DVB signal at output −
1 dB DVB signal at output 140
∆GIF
Ri(3-4)(diff)
Ci(3-4)(diff)
total gain control IF amplifier
59
tilt for ∆f ±3 MHz
input resistance (differential)
fs = 6.9 MHz; 40 dB gain
−
note 2
−
input capacitance (differential) note 2
−
DVB mixer and VCO (pins 10, 15 and 16); see notes 4 and 5 and Table 1
fVCO(max)
maximum oscillator frequency 2(fIF + fs)
125
fVCO(US)
VCO frequency for USA
2(fIF + fs)
−
fVCO(EU)
VCO frequency for Europe
2(fIF + fs)
−
Vref(rms)
oscillator voltage swing between
−
pins 15 and 16 (RMS value)
∆ϕSSB
VVCO
Ri(VCO)
VCO phase noise
VCO control range (pin 10)
VCO control input resistance
(pin 10)
f = 100 kHz; free-running 103
see Figs 6 and 7
0
50
CRstps(VCO) control steepness ∆fs/∆V10
see Figs 6 and 7
DVB (USA)
−
DVB (Europe)
−
5.0
5.5
96
111
100 150
200
−
64
−
0.5
1
2.2
−
1.7
−
130
−
97.5 −
86.0 −
60
−
107
−
−
VP
63
76
0.29 −
0.40 −
V
mA
µV
mV
dB
dB
kΩ
pF
MHz
MHz
MHz
mV
dBc/Hz
V
kΩ
MHz/V
MHz/V
DVB output amplifier (pins 11 and 20)
Vo(DVB)(p-p)
DVB output signal (QAM)
(peak-to-peak value)
Ibias(int)
DC internal bias current for
emitter-follower (pin 11)
Isink(max)
maximum AC and DC output
sink current (pin 11)
Isource(max)
maximum AC and DC output
source current (pin 11)
1.8
2.1
2.4
V
1.9
2.3
2.7
mA
1.5
−
−
mA
2.0
−
−
mA
1998 Nov 09
6