PEMZ1 Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
производитель
PEMZ1 Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
NPN/PNP general purpose transistors
Product specification
PEMZ1
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient notes 1 and 2
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
VALUE
416
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
ICBO
IEBO
hFE
VCEsat
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
VCB = 30 V; IE = 0
VCB = 30 V; IE = 0; Tj = 150 °C
VEB = 4 V; IC = 0
VCE = 6 V; IC = 1 mA
IC = 50 mA; IB = 5.0 mA; note 1
−
−
−
−
−
−
120 −
−
−
fT
transition frequency
Cc
collector capacitance
TR1 (NPN)
TR2 (PNP)
IC = 2 mA; VCE = 12 V; f = 100 MHz 100 −
IE = ie = 0; VCB = 12 V; f = 1 MHz
−
−
−
−
100 nA
10
µA
100 nA
−
200 mV
−
MHz
1.5 pF
2.2 pF
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2001 Nov 07
3
Share Link: 