LT5568-2EUF Просмотр технического описания (PDF) - Linear Technology
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LT5568-2EUF Datasheet PDF : 16 Pages
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LT5568-2
ELECTRICAL CHARACTERISTICS VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz, fRF = 902MHz, PLO = 0dBm.
BBPI, BBMI, BBPQ, BBMQ inputs 0.54VDC, Baseband Input Frequency = 2MHz, I&Q 90° shifted (upper side-band selection).
PRF, OUT = –10dBm, unless otherwise noted. (Note 3)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX
UNITS
IR
LOFT
LO Input (LO)
Image Rejection
Carrier Leakage
(LO Feedthrough)
fBB = 100kHz (Note 16)
EN = High, PLO = 0dBm (Note 16)
EN = Low, PLO = 0dBm (Note 16)
– 52
dBc
– 43
dBm
– 65
dBm
fLO
PLO
S11, ON
S11, OFF
NFLO
GLO
LO Frequency Range
LO Input Power
LO Input Return Loss
LO Input Return Loss
LO Input Referred Noise Figure
LO to RF Small Signal Gain
EN = High (Note 6)
EN = Low (Note 6)
(Note 5) at 900MHz
(Note 5) at 900MHz
0.6 to 1.1
GHz
– 10
0
5
dBm
– 15
dB
– 2.5
dB
14.7
dB
14.7
dB
IIP3LO
LO Input 3rd Order Intercept
Baseband Inputs (BBPI, BBMI, BBPQ, BBMQ)
(Note 5) at 900MHz
–3
dBm
BWBB
VCMBB
RIN, SE
PLO2BB
IP1dB
Baseband Bandwidth
DC Common Mode Voltage
Single-Ended Input Resistance
Carrier Feedthrough on BB
Input 1dB Compression Point
Power Supply (VCC)
VCC
Supply Voltage
–3dB Bandwidth
(Note 4)
(Note 4)
POUT = 0 (Note 4)
Differential Peak-to-Peak (Notes 7, 18)
380
MHz
0.54
V
47
Ω
– 38
dBm
4.3
VP-P, DIFF
4.5
5
5.25
V
ICC, ON
Supply Current
ICC, OFF
Supply Current, Sleep Mode
tON
Turn-On Time
tOFF
Turn-Off Time
Enable (EN), Low = Off, High = On
EN = High
EN = 0V
EN = Low to High (Note 11)
EN = High to Low (Note 12)
80
110 145
mA
100
µA
0.3
µs
1.4
µs
Enable
Input High Voltage
Input High Current
EN = High
EN = 5V
1.0
V
245
µA
Sleep
Input Low Voltage
Input Low Current
EN = Low
EN = 0V
0.5
V
0.01
µA
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Specifications over the –40°C to 85°C temperature range are assured
by design, characterization and correlation with statistical process controls.
Note 3: Tests are performed as shown in the configuration of Figure 7.
Note 4: On each of the four baseband inputs BBPI, BBMI, BBPQ and BBMQ.
Note 5: V(BBPI) – V(BBMI) = 1VDC, V(BBPQ) – V(BBMQ) = 1VDC.
Note 6: Maximum value within 850MHz to 965MHz.
Note 7: An external coupling capacitor is used in the RF output line.
Note 8: At 20MHz offset from the LO signal frequency.
Note 9: At 20MHz offset from the CW signal frequency.
Note 10: At 5MHz offset from the CW signal frequency.
Note 11: RF power is within 10% of final value.
Note 12: RF power is at least 30dB lower than in the ON state.
Note 13: Baseband is driven by 2MHz and 2.1MHz tones. Drive level is set
in such a way that the two resulting RF tones are –10dBm each.
Note 14: IM2 measured at LO frequency + 4.1MHz.
Note 15: IM3 measured at LO frequency + 1.9MHz and LO frequency + 2.2MHz.
Note 16: Amplitude average of the characterization data set without image
or LO feedthrough nulling (unadjusted).
Note 17: The difference in conversion gain between the spurious signal at
f = 3 • LO – BB versus the conversion gain at the desired signal at f = LO +
BB for BB = 2MHz and LO = 900MHz.
Note 18: The input voltage corresponding to the output P1dB.
55682f
3
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