LX5560L Просмотр технического описания (PDF) - Microsemi Corporation

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LX5560L

InGaAs – E-Mode pHEMT Low Noise Amplifier

Microsemi Corporation 

LX5560

TM

® InGaAs – E-Mode pHEMT Low Noise Amplifier

PRODUCTION DATA SHEET

APPLICATION SCHEMATIC

Reference Designator

C1

C2

C3

L1

R1

NOTES

BOM LIST

Part Description

Capacitor, 1 pF

Capacitor,1 µF

Capacitor,10 µF

Inductor, 1.5 nH (TOKO : LL1005-FH1N5S)

Resistor, 30 Ohm

Case

0402

0603

0805

0402

0402

ƒ It is recommended to place C1 at ~30mil from MLP package outline.

ƒ It is recommended to place L1 at ~30mil from MLP package outline.

ƒ C2 and C3 are used for standalone evaluation board test only. They can be replaced with a 1nF(0402) in final applications.

Copyright © 2006

Rev. 1.0, 2006-12-20

Microsemi

Integrated Products Division

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Page 6

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