KBPC2504G Просмотр технического описания (PDF) - LiteOn Technology
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KBPC2504G Datasheet PDF : 2 Pages
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LITE-ON
SEMICONDUCTOR KBPC25005G(W) thru 2510G(W)
GLASS PASSIVATED BRIDGE RECTIFIERS
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 25 Amperes
FEATURES
Rating to 1000V PRV
High efficiency
Glass passivated chip junction
Electrically isolated metal case for maximum heat
dissipation
UL recognized file # E95060
MECHANICAL DATA
Case : Mounted in the bridge encapsulation
Mounting : Hole for # 10 screw
Poarity : As marked on case
Weight : 0.85 ounces , 24.0 grams (terminal)
: 0.74 ounces , 21.0 grams (wire)
KBPC-GW (Wire)
BA
E
D
N
F
D
C
D
KBPC-G (Terminal)
BK
M
I
L
N
J
G
C
KBPC-G/KBPC-GW
DIM. MIN. MAX.
A
31.80
B
7.90 8.40
C
28.30 28.80
D
17.60 18.60
E
0.97 1.07
F
10.90 11.90
G
17.60 18.60
H
13.80 14.80
I
16.10 17.10
J
16.10 17.10
K
18.80 21.30
L
0.76 0.86
M
6.30 6.50
HOLE FOR NO. 10 SCREW
N
5.08 5.59
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
SYMBOL
KBPC25
005G/W
KBPC25
01G/W
KBPC25
02G/W
KBPC25
04G/W
KBPC25 KBPC25 KBPC25
06G/W 08G/W 10G/W
UNIT
VRRM
50
100
200
400
600
800 1000 V
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@TC =55 C
VRMS
35
VDC
50
I(AV)
70
140
280
420
560
700
V
100
200
400
600
800 1000 V
25.0
A
Peak Forward Surge Current
8.3ms single half sine-wave
IFSM
350
A
super imposed on rated load (JEDEC METHOD)
Maximum forward Voltage at 12.5A DC
VF
1.1
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =125 C
IR
I 2t Rating for fusing (t < 8.3ms), (Note 1)
I 2t
Typical Junction
Capacitance per element (Note 2)
CJ
5.0
uA
500
508
A 2S
300
pF
Typical Thermal Resistance (Note 3)
R0JC
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
NOTES : 1.Measured at non-repetitive, for greater than 1ms and less than 8.3ms
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Device mounted on 300mm x 300mm x 1.6mm Cu Plate Heatsink.
1.9
-55 to +150
-55 to +150
C/W
C
C
REV. 2, 01-Dec-2000, KBDI02
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