IS62VV51216LL
512K x 16 LOW VOLTAGE, 1.8V ULTRA
LOW POWER CMOS STATIC RAM
ISSI®
PRELIMINARY INFORMATION
DECEMBER 2000
FEATURES
• High-speed access time: 70, 85 ns
• CMOS low power operation
– 36 mW (typical) operating
– 9 µW (typical) CMOS standby
• TTL compatible interface levels
• Single 1.65V-1.95V VCC power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Available in 48-pin mini BGA (7.2mm x 8.7mm)
DESCRIPTION
The ISSI IS62VV51216LL is a high-speed, 8M bit static
RAMs organized as 512K words by 16 bits. It is fabricated
using ISSI's high-performance CMOS technology. This
highly reliable process coupled with innovative circuit
design techniques, yields high-performance and low power
consumption devices.
For the IS62VV51216LL, when CS1 is HIGH (deselected)
or when CS2 is LOW (deselected) or when CS1 is LOW,
CS2 is HIGH and both LB and UB are HIGH, the device
assumes a standby mode at which the power dissipation
can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A
data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS62VV51216LL is packaged in the JEDEC standard
48-pin mini BGA (7.2mm x 8.7mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A18
DECODER
512K x 16
MEMORY ARRAY
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CS2
CS1
OE
CONTROL
WE
CIRCUIT
UB
LB
This document contains PRELIMINARY INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the
best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
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PRELIMINARY INFORMATION Rev. 00B
01/10/01