IS62VV51216LL-70M Просмотр технического описания (PDF) - Integrated Silicon Solution

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IS62VV51216LL-70M

512K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM

Integrated Silicon Solution 

IS62VV51216LL

ISSI ®

WRITE CYCLE NO. 4 (UB/LB Controlled)

t WC

ADDRESS

ADDRESS 1

t WC

ADDRESS 2

OE

t SA

CS1 LOW

CS2 HIGH

WE

UB, LB

DOUT

DIN

t PBW

t HZWE

DATA UNDEFINED

WORD 1

HIGH-Z

t SD

DATAIN

VALID

t HA

t SA

t PBW

WORD 2

t HA

t LZWE

t HD

t SD

DATAIN

VALID

t HD

UB_CSWR4.eps

DATA RETENTION SWITCHING CHARACTERISTICS (LL)

Symbol

VDR

IDR

tSDR

tRDR

Parameter

Vcc for Data Retention

Data Retention Current

Data Retention Setup Time

Recovery Time

Test Condition

See Data Retention Waveform

Vcc = 1.0V, CS1 ≥ Vcc – 0.2V

See Data Retention Waveform

See Data Retention Waveform

Min. Max. Unit

1.0 2.2

V

—5

µA

0—

ns

tRC —

ns

DATA RETENTION WAVEFORM (CS1 Controlled)

VCC

1.65V

tSDR

Data Retention Mode

tRDR

1.4V

VDR

CS1

GND

CS1 ≥ VCC - 0.2V

Integrated Silicon Solution, Inc. — 1-800-379-4774

9

PRELIMINARY INFORMATION Rev. 00B

01/10/01

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