M393T2863AZA-CE6 Просмотр технического описания (PDF) - Samsung
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M393T2863AZA-CE6 Datasheet PDF : 22 Pages
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1GB, 2GB, 4GB Registered DIMMs
DDR2 SDRAM
M393T5660AZ3/M393T5660AZA : 2GB(256Mx4 *18) Module
(TA=0oC, VDD= 1.9V)
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
IDD6*
Normal
IDD7
E6 (DDR2-667@CL=5)
D5 (DDR2-533@CL=4)
CC (DDR2-400@CL=3)
Unit
TBD
2,150
2,070
mA
TBD
2,370
2,310
mA
TBD
910
850
mA
TBD
1,470
1,310
mA
TBD
1,360
1,240
mA
TBD
1,280
1,220
mA
TBD
654
624
mA
TBD
1,660
1,550
mA
TBD
2,830
2,360
mA
TBD
2,690
2,280
mA
TBD
4,510
4,330
mA
TBD
270
270
mA
TBD
6,080
5,480
mA
Notes
* IDD6 = DRAM current + standby current of PLL and Register
** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
M393T5168AZ0/M393T5166AZA : 4GB(st.512Mx4 *18) Module
(TA=0oC, VDD= 1.9V)
Symbol
IDD0
E6 (DDR2-667@CL=5)
D5 (DDR2-533@CL=4)
CC (DDR2-400@CL=3)
Unit
TBD
3,170
3,040
mA
Notes
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
TBD
TBD
TBD
TBD
TBD
TBD
3,420
1,480
2,600
2,360
2,240
1,138
3,370
mA
1,380
mA
2,320
mA
2,210
mA
2,140
mA
1,088
mA
IDD3N
IDD4W
IDD4R
TBD
TBD
TBD
2,590
3,920
3,770
2,330
mA
3,360
mA
3,260
mA
IDD6*
IDD5B
Normal
IDD7
TBD
TBD
TBD
5,550
540
7,610
5,230
mA
540
mA
6,630
mA
* IDD6 = DRAM current + standby current of PLL and Register
** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Rev. 1.2 Sep. 2005
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