MBD54DWT1G Просмотр технического описания (PDF) - ON Semiconductor
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MBD54DWT1G Datasheet PDF : 4 Pages
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MBD54DWT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Reverse Breakdown Voltage (IR = 10 mA)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 25 V)
Forward Voltage (IF = 0.1 mAdc)
Forward Voltage (IF = 30 mAdc)
Forward Voltage (IF = 100 mAdc)
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc)
(Figure 1)
V(BR)R
30
CT
−
IR
−
VF
−
VF
−
VF
−
trr
−
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current (t < 1.0 s)
VF
−
VF
−
IF
−
IFRM
−
IFSM
−
Typ
−
7.6
0.5
0.22
0.41
0.52
−
0.29
0.35
−
−
−
Max
−
10
2.0
0.24
0.5
1.0
5.0
0.32
0.40
200
300
600
Unit
V
pF
mAdc
Vdc
Vdc
Vdc
ns
Vdc
Vdc
mAdc
mAdc
mAdc
820 W
+10 V
2k
100 mH IF
0.1 mF
0.1 mF
tr
tp
t
IF
10%
50 W OUTPUT
PULSE
GENERATOR
DUT
50 W INPUT
90%
SAMPLING
OSCILLOSCOPE VR
IR
INPUT SIGNAL
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
trr
t
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
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